Postdoctoral Appointee - Microelectronics Research

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Five (5) postdoctoral positions at Argonne National Laboratory for microelectronics research

As part of a planned expansion in research activities in microelectronics at Argonne National Laboratory, in partnership with universities and industry, we have five (5) post-doctoral positions open for carrying out fundamental and multidisciplinary research on new materials discovery and algorithmic/architectural approaches that can inform them; for new ultra-dense digital memories, and fast synaptic memory for neuromorphic applications. This is part of a Department of Energy funded project that includes Purdue University as a partner, and IBM and Applied Materials as industrial collaborators.

The PIs in this project cover a range of multidisciplinary expertise from materials science (S. Guha, CD Phatak, G. Galli, D. Fong) and devices (K. Roy, S.Guha), circuits and architectures (Roy, Raghunathan) and algorithms (P. Beckmann). In addition to working with them in a team environment and in the spirit of co-design, the positions allow the opportunity to work with a large number of other researchers within the Argonne, University of Chicago, and Purdue research ecosystems. Research facilities at both Argonne and the University of Chicago will be available to all the postdoctoral scientists. The descriptions of the specific positions are listed below. We encourage applicants who are in interested in acquiring a multidisciplinary approach to microelectronics research. In your application please denote the specific positions(s) you are interested in. We seek candidates who have recently received their Ph.D. degrees (within the last three years), or are expecting to graduate soon. Candidates should have excellent verbal and communications skills.

These appointments are term appointments that may be renewed on an annual basis for up to three years.

Position Requirements

1. In-situ electron microscopy of microelectronic device heterostructures (Materials Science Division): We seek a candidate with experience in semiconducting and oxide materials, and their characterization using advanced high resolution transmission electron microscopy (STEM, HR-TEM, and compositional mapping (EDX/EELS). The candidate will be part of a highly interdisciplinary project focused on developing a fundamental understanding of novel oxide based synaptic memory as well as investigate effects of defects and interfaces using in-situ TEM approaches. A strong experimental and theoretical background in conducting in-situ electrical transport measurements, or familiarity with electrical transport measurements of semiconductors is highly desirable but not necessary. The work will involve fabrication of suitable sample geometries for understanding electrical transport behavior of oxides, and semiconductor materials using state-of-the-art facilities at Center for Nanoscale Materials, Argonne National Laboratory. Experience with thin film deposition, nanofabrication and patterning of devices is also desirable. The synthesis of bulk materials, first-principles simulations/modeling, and organic or bio-related areas are not in consideration for this position.

The candidate should have a Ph.D in materials science/condensed matter physics/applied physics or related field. The position will be under the supervision of Dr. C.D. Phatak.

2. In-operando X-ray studies of heterostructures for advanced memory (Materials Science Division): We seek a candidate with experience in synchrotron X-ray scattering / spectroscopy and thin film deposition. This post-doctoral scientist will be part of a collaborative effort focused on the discovery scienceneeded for the development of new memory technologies, as well as the investigation and identification of defects and microstructural features that can act as electronically or optically addressed memory elements. The research will involve the epitaxial growth of oxide thin film heterostructures and their characterization by in-situ / operando synchrotron X-ray methods at the Advanced Photon Source at Argonne. The successful candidate should have a good understanding numerical methods for data analysis.

This position requires a PhD in materials science, condensed matter physics, or a related field. The position will be under the supervision of Dr. Dillon Fong.

3. Computational materials science for the study of quantum materials for microelectronic applications (Materials Science Division): Excellent candidates with a background in solid-state chemistry/physics and first-principles simulations of materials, in particular calculation of excited state properties, are invited to apply. Major duties and responsibilities include the use of advanced electronic structure methods and quantum simulations to model and predict the properties of complex, heterogeneous insulators and semiconductors for the realization of novel microelectronic devices for high density memory.

A strong background in computational condensed matter physics and/or materials chemistry is required, including density functional theory and many-body perturbation theory. Previous experience with first-principles materials simulation codes (such as Quantum Espresso, Qbox, WEST) is preferred. The research will be in close collaboration with experimental colleagues and previous collaborations with experimental groups is desirable.

This position requires a Ph.D. in physics, chemistry, materials science or a related field of research. The position will be under the direction of Prof. Giulia Galli and will be in close collaboration with experimental colleagues. Further information on research activities in the Galli group are available at

4. New oxide heterostructures for ultra-dense and synaptic memory (Materials Science Division): We seek candidates with a background in semiconductor and oxide heterostructure research and a strong interest in microelectronics research. Experience with thin film deposition of semiconductors or oxides and the electrical characterization of semiconductor devices is essential. Expertise with ultra-high vacuum, molecular beam epitaxy, atomic layer deposition and sputter deposition is highly desirable, as is experience with cleanroom based semiconductor fabrication techniques and device processing.

The post-doctoral scientist will carry out research on new oxide based heterostructures that can have (i) highly controllable programmable resistances for near analog synaptic devices and operation for cross-bar arrays; and (ii) structures for 3-D digital memory that can achieve DNA class densities. The research will involve materials design and synthesis using MBE and other deposition techniques, fabrication of test device structures and their electrical characterization. The research will involve close collaboration with the theory and characterization groups, as well as with device engineers.

A Ph.D. in materials science, applied physics or a related field is essential. The position will be under the supervision of Supratik Guha. More information about his group may be found in

5. Optical spectroscopy of atomic defects in heterostructures for ultra-dense digital memory (Materials Science Division): We seek candidates with a background in spectroscopy of luminescent atomic/molecular systems or defects in solids. Strong interest in interdisciplinary research across atomic physics and condense matter physics is highly desirable. Expertise in laser optics and/or high-precision spectroscopy of light-matter interfaces is required. Prior experience with atomic defect (e.g. rare-earths, color centers in diamond or other semiconductors) optical spectroscopy, cryogenic instrumentation, nano-electronics, or photonics are preferred.

The postdoc scientist will conduct cutting-edge experimental research on high precision laser spectroscopy of optically active rare-earth dopants in oxide or other semiconductor heterostructures synthesized by other team members of this collaborative project. The experimental studies will focus on excited-state dynamics of rare-earth systems and their relaxations via energy transfer to localized traps in the host matrix. The researcher will need to work very closely and synergistically with the material grower, microscopists and computational scientist to develop an understanding of the energy transfer mechanism, such as excitation/de-excitation, trap/de-trap via a variety of physical processes in the material. The project will also involve fabrication and measurement of novel devices for demonstrating optical read/write operations of an atomic-scale memory via rare-earth dopants.

A Ph.D. in physics, applied sciences, engineering or a related field is required. The postdoc will work under the supervision of Tian Zhong and will be in close collaboration with material science and theory colleagues in the team. Further information on research activities in the Zhong group are found in

Job Family
Postdoctoral Family

Job Profile
Postdoctoral Appointee

Worker Type
Long-Term (Fixed Term)

Time Type
Full time

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